Transient characteristics simulation of total ionizing dose effect on Si n-metal-oxide-semiconductor field effect transistor under different gate voltage

Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)

The IGFET or MOSFET is a voltage controlled field effect transistor that differs from a JFET in that it has a “Metal Oxide” Gate electrode which is electrically insulated from the main semiconductor n-channel or p-channel by a very thin layer of insulating material usually silicon dioxide, commonly known as glass. This ultra thin insulated metal gate electrode can be thought of as one plate of ...

Technique for producing highly planar Si/SiO0.64Ge0.36 /Si metal–oxide–semiconductor field effect transistor channels

Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited AI2O3 gate dielectric

Fast 1 kV metal-oxide-semiconductor field-effect transistor switch

Radiation therapy treatment unit dose-rate effects on metal–oxide–semiconductor field-effect transistor (MOSFET) detectors

Metal oxide semiconductor field effect transistor (MOSFET) detectors have recently been introduced to radiation therapy. However, the response of these detectors is known to vary with dose rate. Therefore, it is important to evaluate how much variation between the treatment prescribed dose and the dose that is actually delivered to the patient using high-energy photon or electron beams under co...